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| SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL 7 BSS65 - L1 BSS65R - L5 BSS65 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)EBO Cut-Off Currents Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ICBO IEBO VCE(sat) VBE(sat) -0.75 -0.82 30 40 400 6 6 23 34 60 90 MIN. -12 -12 -4 -100 -100 -0.15 -0.25 -0.98 -1.20 150 MHz pF pF nS nS SYMBOL VCBO VCEO VEBO ICM IC IC PTOT tj:tstg TYP. MAX. VALUE -12 -12 -4 -200 -100 -50 330 -55 to +150 UNIT V V V nA nA V V V V CONDITIONS. IC=-10mA IC=-10A * IE=-10A VCB=-6V, IE=0 VEB=-4V, IC=0 IC=-10mA, IB=-1mA IC=-30mA, IB=-3mA IC=-10mA, IB=-1mA IC=-30mA, IB=-3mA IC=-10mA, VCE=-0.3V IC=-30mA, VCE=-0.5V IC=-30mA, VCE=-10V, f=100MHz VCB=-5V, IE=0, f=1MHz VEB=-0.5V, IC=0, f=1MHz IC=-30mA IB1 = -IB2= -1.5mA VCC=-10V UNIT V V V mA mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). BreakdownVoltages V(BR)CEO Static Forward Current hFE Transfer Ratio Transition Frequency Collector-Base Capacitance Emitter Base Capacitance fT Cobo Cebo ton toff Switching Times Turn-On Time Turn-Off Time PAGE NUMBER |
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